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MX29F400T/B
4M-BIT [512Kx8/256Kx16] CMOS FLASH MEMORY
FEATURES
* 524,288 x 8/262,144 x 16 switchable * Single power supply operation - 5.0V only operation for read, erase and program operation * Fast access time: 55/70/90/120ns * Low power consumption - 40mA maximum active current(5MHz) - 1uA typical standby current * Command register architecture - Byte/word Programming (7us/12us typical) - Sector Erase (Sector structure 16K-Bytex1, 8KBytex2, 32K-Bytex1, and 64K-Byte x7) * Auto Erase (chip & sector) and Auto Program - Automatically erase any combination of sectors with Erase Suspend capability. - Automatically program and verify data at specified address * Erase suspend/Erase Resume - Suspends an erase operation to read data from, or program data to, another sector that is not being erased, then resumes the erase. * Status Reply - Data polling & Toggle bit for detection of program and erase cycle completion. * Ready/Busy pin (RY/BY) - Provides a hardware method of detecting program or erase cycle completion. - Sector protect/unprotect for 5V only system or 5V/ 12V system. * Sector protection - Hardware method to disable any combination of sectors from program or erase operations * 100,000 minimum erase/program cycles * Latch-up protected to 100mA from -1V to VCC+1V * Boot Code Sector Architecture - T = Top Boot Sector - B = Bottom Boot Sector * Low VCC write inhibit is equal to or less than 3.2V * Package type: - 44-pin SOP - 48-pin TSOP * Compatibility with JEDEC standard - Pinout and software compatible with single-power supply Flash * 20 years data retention
GENERAL DESCRIPTION
The MX29F400T/B is a 4-mega bit Flash memory organized as 512K bytes of 8 bits or 256K words of 16 bits. MXIC's Flash memories offer the most cost-effective and reliable read/write non-volatile random access memory. The MX29F400T/B is packaged in 44-pin SOP, 48-pin TSOP. It is designed to be reprogrammed and erased in system or in standard EPROM programmers. The standard MX29F400T/B offers access time as fast as 55ns, allowing operation of high-speed microprocessors without wait states. To eliminate bus contention, the MX29F400T/B has separate chip enable (CE) and output enable (OE) controls. MXIC's Flash memories augment EPROM functionality with in-circuit electrical erasure and programming. The MX29F400T/B uses a command register to manage this functionality. The command register allows for 100% TTL level control inputs and fixed power supply levels during erase and programming, while maintaining maximum EPROM compatibility. MXIC Flash technology reliably stores memory contents even after 100,000 erase and program cycles. The MXIC cell is designed to optimize the erase and programming mechanisms. In addition, the combination of advanced tunnel oxide processing and low internal electric fields for erase and program operations produces reliable cycling. The MX29F400T/B uses a 5.0V10% VCC supply to perform the High Reliability Erase and auto Program/Erase algorithms. The highest degree of latch-up protection is achieved with MXIC's proprietary non-epi process. Latch-up protection is proved for stresses up to 100 milliamps on address and data pin from -1V to VCC + 1V.
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PIN CONFIGURATIONS
44 SOP(500 mil)
NC RY/BY A17 A7 A6 A5 A4 A3 A2 A1 A0 CE GND OE Q0 Q8 Q1 Q9 Q2 Q10 Q3 Q11 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 RESET WE A8 A9 A10 A11 A12 A13 A14 A15 A16 BYTE GND Q15/A-1 Q7 Q14 Q6 Q13 Q5 Q12 Q4 VCC
PIN DESCRIPTION
SYMBOL A0~A17 Q0~Q14 Q15/A-1 CE WE BYTE RESET OE RY/BY VCC GND PIN NAME Address Input Data Input/Output Q15(Word mode)/LSB addr(Byte mode) Chip Enable Input Write Enable Input Word/Byte Selection input Hardware Reset Pin/Sector Protect Unlock Output Enable Input Ready/Busy Output Power Supply Pin (+5V) Ground Pin
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22
48 TSOP (Standard Type) (12mm x 20mm)
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
MX29F400T/B
A15 A14 A13 A12 A11 A10 A9 A8 NC NC WE RESET NC NC RY/BY NC A17 A7 A6 A5 A4 A3 A2 A1
MX29F400T/B
48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25
A16 BYTE GND Q15/A-1 Q7 Q14 Q6 Q13 Q5 Q12 Q4 VCC Q11 Q3 Q10 Q2 Q9 Q1 Q8 Q0 OE GND CE A0
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SECTOR STRUCTURE
MX29F400T TOP BOOT SECTOR ADDRESS TABLE Sector Size (Kbytes/ Kwords) 64/32 64/32 64/32 64/32 64/32 64/32 64/32 32/16 8/4 8/4 16/8 Address Range (in hexadecimal) (x8) (x16) Address Range Address Range 00000h-0FFFFh 10000h-1FFFFh 20000h-2FFFFh 30000h-3FFFFh 40000h-4FFFFh 50000h-5FFFFh 60000h-6FFFFh 70000h-77FFFh 78000h-79FFFh 7A000h-7BFFFh 7C000h-7FFFFh 00000h-07FFFh 08000h-0FFFFh 10000h-17FFFh 18000h-1FFFFh 20000h-27FFFh 28000h-2FFFFh 30000h-37FFFh 38000h-3BFFFh 3C000h-3CFFFh 3D000h-3DFFFh 3E000h-3FFFFh
Sector SA0 SA1 SA2 SA3 SA4 SA5 SA6 SA7 SA8 SA9 SA10
A17 0 0 0 0 1 1 1 1 1 1 1
A16 0 0 1 1 0 0 1 1 1 1 1
A15 0 1 0 1 0 1 0 1 1 1 1
A14 X X X X X X X 0 1 1 1
A13 X X X X X X X X 0 0 1
A12 X X X X X X X X 0 1 X
MX29F400B BOTTOM BOOT SECTOR ADDRESS TABLE Sector Size (Kbytes/ Kwords) 16/8 8/4 8/4 32/16 64/32 64/32 64/32 64/32 64/32 64/32 64/32 Address Range (in hexadecimal) (x8) (x16) Address Range Address Range 00000h-03FFFh 04000h-05FFFh 06000h-07FFFh 08000h-0FFFFh 10000h-1FFFFh 20000h-2FFFFh 30000h-3FFFFh 40000h-4FFFFh 50000h-5FFFFh 60000h-6FFFFh 70000h-7FFFFh 00000h-01FFFh 02000h-02FFFh 03000h-03FFFh 04000h-07FFFh 08000h-0FFFFh 10000h-17FFFh 18000h-1FFFFh 20000h-27FFFh 28000h-2FFFFh 30000h-37FFFh 38000h-3FFFFh
Sector SA0 SA1 SA2 SA3 SA4 SA5 SA6 SA7 SA8 SA9 SA10
A17 0 0 0 0 0 0 0 1 1 1 1
A16 0 0 0 0 0 1 1 0 0 1 1
A15 0 0 0 0 1 0 1 0 1 0 1
A14 0 0 0 1 X X X X X X X
A13 0 1 1 X X X X X X X X
A12 X 0 1 X X X X X X X X
Note: Address range is A17~A-1 in byte mode and A17~A0 in word mode.
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BLOCK DIAGRAM
CE OE WE
CONTROL INPUT LOGIC
PROGRAM/ERASE HIGH VOLTAGE
WRITE STATE MACHINE (WSM)
STATE
MX29F400T/B
X-DECODER
REGISTER
ARRAY SOURCE HV
ADDRESS LATCH
A0-A17
FLASH ARRAY
AND BUFFER
Y-PASS GATE
COMMAND DATA DECODER
Y-DECODER
SENSE AMPLIFIER
PGM DATA HV
COMMAND DATA LATCH
PROGRAM DATA LATCH
Q0-Q15/A-1
I/O BUFFER
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AUTOMATIC PROGRAMMING
The MX29F400T/B is byte programmable using the Automatic Programming algorithm. The Automatic Programming algorithm makes the external system do not need to have time out sequence nor to verify the data programmed. The typical chip programming time at room temperature of the MX29F400T/B is less than 4 seconds.
AUTOMATIC ERASE ALGORITHM
MXIC's Automatic Erase algorithm requires the user to write commands to the command register using standard microprocessor write timings. The device will automatically pre-program and verify the entire array. Then the device automatically times the erase pulse width, provides the erase verification, and counts the number of sequences. A status bit toggling between consecutive read cycles provides feedback to the user as to the status of the programming operation. Register contents serve as inputs to an internal statemachine which controls the erase and programming circuitry. During write cycles, the command register internally latches address and data needed for the programming and erase operations. During a system write cycle, addresses are latched on the falling edge, and data are latched on the rising edge of WE or CE, whichever happens first . MXIC's Flash technology combines years of EPROM experience to produce the highest levels of quality, reliability, and cost effectiveness. The MX29F400T/B electrically erases all bits simultaneously using FowlerNordheim tunneling. The bytes are programmed by using the EPROM programming mechanism of hot electron injection. During a program cycle, the state-machine will control the program sequences and command register will not respond to any command set. During a Sector Erase cycle, the command register will only respond to Erase Suspend command. After Erase Suspend is completed, the device stays in read mode. After the state machine has completed its task, it will allow the command register to respond to its full command set.
AUTOMATIC CHIP ERASE
The entire chip is bulk erased using 10 ms erase pulses according to MXIC's Automatic Chip Erase algorithm. Typical erasure at room temperature is accomplished in less than 4 second. The Automatic Erase algorithm automatically programs the entire array prior to electrical erase. The timing and verification of electrical erase are controlled internally within the device.
AUTOMATIC SECTOR ERASE
The MX29F400T/B is sector(s) erasable using MXIC's Auto Sector Erase algorithm. Sector erase modes allow sectors of the array to be erased in one erase cycle. The Automatic Sector Erase algorithm automatically programs the specified sector(s) prior to electrical erase. The timing and verification of electrical erase are controlled internally within the device.
AUTOMATIC PROGRAMMING ALGORITHM
MXIC's Automatic Programming algorithm requires the user to only write program set-up commands (including 2 unlock write cycle and A0H) and a program command (program data and address). The device automatically times the programming pulse width, provides the program verification, and counts the number of sequences. A status bit similar to DATA polling and a status bit toggling between consecutive read cycles, provide feedback to the user as to the status of the programming operation.
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TABLE1. SOFTWARE COMMAND DEFINITIONS
Command Bus First Bus Cycle Second Bus Third Bus Cycle Cycle Data Fourth Bus Cycle Addr Data Fifth Bus Cycle Addr Sixth Bus Cycle Data Addr Data
Cycle Addr Reset Read Read Silicon ID Word Byte Sector Protect Verify Byte 4 Word 1 1 4 4 4
Data Addr Data Addr
XXXH F0H RA RD 2AAH 55H 555H 55H 2AAH 55H 555H 90H AAAH 90H 555H 90H ADI ADI (SA) DDI DDI XX00H
555H AAH AAAH AAH 555H AAH
x02H XX01H AAAH AAH 555H 55H AAAH 90H (SA) 00H
x04H 01H Program Word Byte Chip Erase Word Byte Sector Erase Word Byte Sector Erase Suspend Sector Erase Resume Unlock for sector protect/unprotect 4 4 6 6 6 6 1 1 6 555H AAH AAAH AAH 555H AAH AAAH AAH 555H AAH AAAH AAH XXXH B0H XXXH 30H 555H AAH 2AAH 55H 555H 80H 555H AAH 2AAH 55H 555H 20H 2AAH 55H 555H 55H 2AAH 55H 555H 55H 2AAH 55H 555H 55H 555H A0H AAAH A0H 555H 80H AAAH 80H 555H 80H AAAH 80H PA PA PD PD 2AAH 55H 555H 55H 2AAH 55H 555H 55H 555H 10H AAAH 10H SA SA 30H 30H
555H AAH AAAH AAH 555H AAH AAAH AAH
Note: 1. ADI = Address of Device identifier; A1=0, A0 = 0 for manufacture code,A1=0, A0 = 1 for device code, A2~A17=do not care. (Refer to table 3) DDI = Data of Device identifier : C2H for manufacture code, 23H/ABH (x8) and 2223H/22ABH (x16) for device code. X = X can be VIL or VIH RA=Address of memory location to be read. RD=Data to be read at location RA. 2.PA = Address of memory location to be programmed. PD = Data to be programmed at location PA. SA = Address to the sector to be erased. 3.The system should generate the following address patterns: 555H or 2AAH to Address A10~A0 in word mode/AAAH or 555H to Address A10~A-1 in byte mode. Address bit A11~A17=X=Don't care for all address commands except for Program Address (PA) and Sector Address (SA). Write Sequence may be initiated with A11~A17 in either state. 4. For Sector Protect Verify operation:If read out data is 01H, it means the sector has been protected. If read out data is 00H, it means the sector is still not being protected.
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COMMAND DEFINITIONS
Device operations are selected by writing specific address and data sequences into the command register. Writing incorrect address and data values or writing them in the improper sequence will reset the device to the read mode. Table 1 defines the valid register command sequences. TABLE 2. MX29F400T/B BUS OPERATION
Pins Mode Read Silicon ID Manufacture Code(1) Read Silicon ID Device Code(1) Read Standby Output Disable Write Sector Protect with 12V system(6) Chip Unprotect with 12V system(6) Verify Sector Protect with 12V system Sector Protect without 12V system (6) Chip Unprotect without 12V system (6) Verify Sector Protect/Unprotect without 12V system (7) Reset X X X X X X X HIGH Z L L H X H X H Code(5) L H L X X H H X L H L X X L H X L L H X H X VID(2) Code(5) L VID(2) L X X H VID(2) X L H L L L L X H H H X H L A0 X X A0 X A1 X X A1 X A6 X X A6 L A9 X X A9 VID(2) L L H H L X VID(2) L L H L L X VID(2) C2H (Byte mode) 00C2H (Word mode) 23H/ABH (Byte mode) 2223H/22ABH (Word mode) DOUT HIGH Z HIGH Z DIN(3) X CE OE WE A0 A1 A6 A9 Q0 ~ Q15
Note that the Erase Suspend (B0H) and Erase Resume (30H) commands are valid only while the Sector Erase operation is in progress. Either of the two reset command sequences will reset the device(when applicable).
VID(2) L
NOTES: 1. Manufacturer and device codes may also be accessed via a command register write sequence. Refer to Table 1. 2. VID is the Silicon-ID-Read high voltage, 11.5V to 12.5V. 3. Refer to Table 1 for valid Data-In during a write operation. 4. X can be VIL or VIH. 5. Code=00H/XX00H means unprotected. Code=01H/XX01H means protected. A17~A12=Sector address for sector protect. 6. Refer to sector protect/unprotect algorithm and waveform. Must issue "unlock for sector protect/unprotect" command before "sector protect/unprotect without 12V system" command. 7. The "verify sector protect/unprotect without 12V system" is only following "Sector protect/unprotect without 12V system" command.
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READ/RESET COMMAND
The read or reset operation is initiated by writing the read/reset command sequence into the command register. Microprocessor read cycles retrieve array data. The device remains enabled for reads until the command register contents are altered. If program-fail or erase-fail happen, the write of F0H will reset the device to abort the operation. A valid command must then be written to place the device in the desired state.
SET-UP AUTOMATIC CHIP/SECTOR ERASE COMMANDS
Chip erase is a six-bus cycle operation. There are two "unlock" write cycles. These are followed by writing the "set-up" command 80H. Two more "unlock" write cycles are then followed by the chip erase command 10H. The Automatic Chip Erase does not require the device to be entirely pre-programmed prior to executing the Automatic Chip Erase. Upon executing the Automatic Chip Erase, the device will automatically program and verify the entire memory for an all-zero data pattern. When the device is automatically verified to contain an all-zero pattern, a self-timed chip erase and verify begin. The erase and verify operations are completed when the data on Q7 is "1" at which time the device returns to the Read mode. The system is not required to provide any control or timing during these operations. When using the Automatic Chip Erase algorithm, note that the erase automatically terminates when adequate erase margin has been achieved for the memory array(no erase verification command is required). If the Erase operation was unsuccessful, the data on Q5 is "1"(see Table 4), indicating the erase operation exceed internal timing limit. The automatic erase begins on the rising edge of the last WE or CE, whichever happens later, pulse in the command sequence and terminates when the data on Q7 is "1" and the data on Q6 stops toggling for two consecutive read cycles, at which time the device returns to the Read mode.
SILICON-ID-READ COMMAND
Flash memories are intended for use in applications where the local CPU alters memory contents. As such, manufacturer and device codes must be accessible while the device resides in the target system. PROM programmers typically access signature codes by raising A9 to a high voltage. However, multiplexing high voltage onto address lines is not generally desired system design practice. The MX29F400T/B contains a Silicon-ID-Read operation to supplement traditional PROM programming methodology. The operation is initiated by writing the read silicon ID command sequence into the command register. Following the command write, a read cycle with A1=VIL,A0=VIL retrieves the manufacturer code of C2H/ 00C2H. A read cycle with A1=VIL, A0=VIH returns the device code of 23H/2223H for MX29F400T, ABH/22ABH for MX29F400B.
TABLE 3. EXPANDED SILICON ID CODE
Pins Manufacture code Device code for MX29F400T Device code for MX29F400B Sector Protection Verification Word Byte Word Byte Word Byte A0 VIL VIL VIH VIH VIH VIH X X A1 VIL VIL VIL VIL VIL VIL VIH VIH Q15~Q8 Q7 00H X 22H X 22H X X X 1 1 0 0 1 1 0 0 Q6 1 1 0 0 0 0 0 0 Q5 0 0 1 1 1 1 0 0 Q4 0 0 0 0 0 0 0 0 Q3 0 0 0 0 1 1 0 0 Q2 Q1 0 0 0 0 0 0 0 0 1 1 1 1 1 1 0 0 Q0 0 0 1 1 1 1 1 0 Code(Hex) 00C2H C2H 2223H 23H 22ABH ABH 01H (Protected) 00H (Unprotected)
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SECTOR ERASE COMMANDS
The Automatic Sector Erase does not require the device to be entirely pre-programmed prior to executing the Automatic Set-up Sector Erase command and Automatic Sector Erase command. Upon executing the Automatic Sector Erase command, the device will automatically program and verify the sector(s) memory for an all-zero data pattern. The system is not required to provide any control or timing during these operations. When the sector(s) is automatically verified to contain an all-zero pattern, a self-timed sector erase and verify begin. The erase and verify operations are complete when the data on Q7 is "1" and the data on Q6 stops toggling for two consecutive read cycles, at which time the device returns to the Read mode. The system is not required to provide any control or timing during these operations. When using the Automatic Sector Erase algorithm, note that the erase automatically terminates when adequate Table 4. Write Operation Status
Status Byte Program in Auto Program Algorithm Auto Erase Algorithm Erase Suspend Read (Erase Suspended Sector) In Progress Erase Suspended Mode Erase Suspend Read Data (Non-Erase Suspended Sector) Erase Suspend Program Byte Program in Auto Program Algorithm Exceeded Time Limits Auto Erase Algorithm Erase Suspend Program Q7 Q7 0 Q7 Data Toggle Toggle Toggle Toggle Data Data Data 0 1 1 1 N/A N/A 1 N/A N/A No Toggle Toggle N/A 1 0 0 0 0 Q7 Note1 Q7 0 1 Q6 Toggle Toggle No Toggle Q5 Note2 0 0 0 Q3 N/A 1 Q2 No Toggle Toggle RY/BY 0 0 1
erase margin has been achieved for the memory array (no erase verification command is required). Sector erase is a six-bus cycle operation. There are two "unlock" write cycles. These are followed by writing the setup command 80H. Two more "unlock" write cycles are then followed by the sector erase command 30H. The sector address is latched on the falling edge of WE or CE, whichever happens later, while the command(data) is latched on the rising edge of WE or CE, whichever happens first. Sector addresses selected are loaded into internal register on the sixth falling edge of WE or CE, whichever happens later. Each successive sector load cycle started by the falling edge of WE or CE, whichever happens later, must begin within 30us from the rising edge of the preceding WE or CE, whichever happens First, otherwise, the loading period ends and internal auto sector erase cycle starts. (Monitor Q3 to determine if the sector erase timer window is still open, see section Q3, Sector Erase Timer.) Any command other than Sector Erase(30H) or Erase Suspend(B0H) during the time-out period resets the device to read mode.
N/A Toggle
Note:
1. Q7 and Q2 require a valid address when reading status information. Refer to the appropriate subsection for further details. 2. Q5 switches to '1' when an Auto Program or Auto Erase operation has exceeded the maximum timing limits. See "Q5:Exceeded Timing Limits " for more information.
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ERASE SUSPEND
This command only has meaning while the state machine is executing Automatic Sector Erase operation, and therefore will only be responded during Automatic Sector Erase operation. When the Erase Suspend command is written during a sector erase operation, the device requires a maximum of 100us to suspend the erase operations. However, When the Erase Suspend command is written during the sector erase time-out, the device immediately terminates the time-out period and suspends the erase operation. After this command has been executed, the command register will initiate erase suspend mode. The state machine will return to read mode automatically after suspend is ready. At this time, state machine only allows the command register to respond to the Read Memory Array, Erase Resume and program commands. The system can determine the status of the program operation using the Q7 or Q6 status bits, just as in the standard program operation. After an erase-suspend program operation is complete, the system can once again read array data within non-suspended sectors. tem is not required to provide further controls or timings. The device will automatically provide an adequate internally generated program pulse and verify margin. If the program operation was unsuccessful, the data on Q5 is "1"(see Table 4), indicating the program operation exceed internal timing limit. The automatic programming operation is completed when the data read on Q6 stops toggling for two consecutive read cycles and the data on Q7 and Q6 are equivalent to data written to these two bits, at which time the device returns to the Read mode(no program verify command is required).
DATA POLLING-Q7
The MX29F400T/B also features Data Polling as a method to indicate to the host system that the Automatic Program or Erase algorithms are either in progress or completed. While the Automatic Programming algorithm is in operation, an attempt to read the device will produce the complement data of the data last written to Q7. Upon completion of the Automatic Program Algorithm an attempt to read the device will produce the true data last written to Q7. The Data Polling feature is valid after the rising edge of the fourth WE or CE, whichever happens first, pulse of the four write pulse sequences for automatic program. While the Automatic Erase algorithm is in operation, Q7 will read "0" until the erase operation is competed. Upon completion of the erase operation, the data on Q7 will read "1". The Data Polling feature is valid after the rising edge of the sixth WE or CE, whichever happens first pulse of six write pulse sequences for automatic chip/ sector erase. The Data Polling feature is active during Automatic Program/Erase algorithm or sector erase time-out. (see section Q3 Sector Erase Timer)
ERASE RESUME
This command will cause the command register to clear the suspend state and return back to Sector Erase mode but only if an Erase Suspend command was previously issued. Erase Resume will not have any effect in all other conditions. Another Erase Suspend command can be written after the chip has resumed erasing.
SET-UP AUTOMATIC PROGRAM COMMANDS
To initiate Automatic Program mode, A three-cycle command sequence is required. There are two "unlock" write cycles. These are followed by writing the Automatic Program command A0H. Once the Automatic Program command is initiated, the next WE or CE, pulse causes a transition to an active programming operation. Addresses are latched on the falling edge, and data are internally latched on the rising edge of the WE or CE, whichever happens first, pulse. The rising edge of WE or CE, whichever happens first, also begins the programming operation. The sys-
RY/BY:Ready/Busy
The RY/BY is a dedicated, open-drain output pin that indicates whether an Automatic Erase/Program algorithm is in progress or complete. The RY/BY status is valid after the rising edge of the final WE or CE, whichever happens first, pulse in the command sequence. Since RY/BY is an open-drain output, several RY/BY pins can be tied together in parallel with a pull-up resistor to Vcc.
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If the output is low (Busy), the device is actively erasing or programming. (This includes programming in the Erase Suspend mode.) If the output is high (Ready), the device is ready to read array data (including during the Erase Suspend mode), or is in the standby mode. Table 4 shows the outputs for RY/BY.
Q2:Toggle Bit II
The "Toggle Bit II" on Q2, when used with Q6, indicates whether a particular sector is actively erasing (that is, the Automatic Erase algorithm is in process), or whether that sector is erase-suspended. Toggle Bit I is valid after the rising edge of the final WE or CE, whichever happens first, pulse in the command sequence. Q2 toggles when the system reads at addresses within those sectors that have been selected for erasure. (The system may use either OE or CE to control the read cycles.) But Q2 cannot distinguish whether the sector is actively erasing or is erase-suspended. Q6, by comparison, indicates whether the device is actively erasing, or is in Erase Suspend, but cannot distinguish which sectors are selected for erasure. Thus, both status bits are required for sectors and mode information. Refer to Table 4 to compare outputs for Q2 and Q6.
Q6:Toggle BIT I
Toggle Bit I on Q6 indicates whether an Automatic Program or Erase algorithm is in progress or complete, or whether the device has entered the Erase Suspend mode. Toggle Bit I may be read at any address, and is valid after the rising edge of the final WE or CE, whichever happens first, pulse in the command sequence (prior to the program or erase operation), and during the sector time-out. During an Automatic Program or Erase algorithm operation, successive read cycles to any address cause Q6 to toggle. The system may use either OE or CE to control the read cycles. When the operation is complete, Q6 stops toggling. After an erase command sequence is written, if all sectors selected for erasing are protected, Q6 toggles and returns to reading array data. If not all selected sectors are protected, the Automatic Erase algorithm erases the unprotected sectors, and ignores the selected sectors that are protected. The system can use Q6 and Q2 together to determine whether a sector is actively erasing or is erase suspended. When the device is actively erasing (that is, the Automatic Erase algorithm is in progress), Q6 toggling. When the device enters the Erase Suspend mode, Q6 stops toggling. However, the system must also use Q2 to determine which sectors are erasing or erase-suspended. Alternatively, the system can use Q7. If a program address falls within a protected sector, Q6 toggles for approximately 2 us after the program command sequence is written, then returns to reading array data. Q6 also toggles during the erase-suspend-program mode, and stops toggling once the Automatic Program algorithm is complete. Table 4 shows the outputs for Toggle Bit I on Q6.
Reading Toggle Bits Q6/ Q2
Whenever the system initially begins reading toggle bit status, it must read Q7-Q0 at least twice in a row to determine whether a toggle bit is toggling. Typically, the system would note and store the value of the toggle bit after the first read. After the second read, the system would compare the new value of the toggle bit with the first. If the toggle bit is not toggling, the device has completed the program or erase operation. The system can read array data on Q7-Q0 on the following read cycle. However, if after the initial two read cycles, the system determines that the toggle bit is still toggling, the system also should note whether the value of Q5 is high (see the section on Q5). If it is, the system should then determine again whether the toggle bit is toggling, since the toggle bit may have stopped toggling just as Q5 went high. If the toggle bit is no longer toggling, the device has successfully completed the program or erase operation. If it is still toggling, the device did not complete the operation successfully, and the system must write the reset command to return to reading array data. The remaining scenario is that system initially determines that the toggle bit is toggling and Q5 has not gone high. The system may continue to monitor the toggle bit and Q5 through successive read cycles, determining the status as described in the previous paragraph. Alternatively, it may choose to perform other system tasks. In this case, the system must start at the beginning of the algorithm when it returns to determine the status of the operation.
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MX29F400T/B
Q5 Exceeded Timing Limits
Q5 will indicate if the program or erase time has exceeded the specified limits (internal pulse count). Under these conditions Q5 will produce a "1". This time-out condition indicates that the program or erase cycle was not successfully completed. Data Polling and Toggle Bit are the only operating functions of the device under this condition. If this time-out condition occurs during sector erase operation, it specifies that a particular sector is bad and it may not be reused. However, other sectors are still functional and may be used for the program or erase operation. The device must be reset to use other sectors. Write the Reset command sequence to the device, and then execute program or erase command sequence. This allows the system to continue to use the other active sectors in the device. If this time-out condition occurs during the chip erase operation, it specifies that the entire chip is bad or combination of sectors are bad. If this time-out condition occurs during the byte programming operation, it specifies that the entire sector containing that byte is bad and this sector maynot be reused, (other sectors are still functional and can be reused). The time-out condition may also appear if a user tries to program a non blank location without erasing. In this case the device locks out and never completes the Automatic Algorithm operation. Hence, the system never reads a valid data on Q7 bit and Q6 never stops toggling. Once the Device has exceeded timing limits, the Q5 bit will indicate a "1". Please note that this is not a device failure condition since the device was incorrectly used. resulting from VCC power-up and power-down transition or system noise. TEMPORARY SECTOR UNPROTECT This feature allows temporary unprotection of previously protected sector to change data in-system. The Temporary Sector Unprotect mode is activated by setting the RESET pin to VID(11.5V-12.5V). During this mode, formerly protected sectors can be programmed or erased as un-protected sector. Once VID is remove from the RESET pin, all the previously protected sectors are protected again.
Q3 Sector Erase Timer
After the completion of the initial sector erase command sequence, the sector erase time-out will begin. Q3 will remain low until the time-out is complete. Data Polling and Toggle Bit are valid after the initial sector erase command sequence. If Data Polling or the Toggle Bit indicates the device has been written with a valid erase command, Q3 may be used to determine if the sector erase timer window is still open. If Q3 is high ("1") the internally controlled erase cycle has begun; attempts to write subsequent commands to the device will be ignored until the erase operation is completed as indicated by Data Polling or Toggle Bit. If Q3 is low ("0"), the device will accept additional sector erase commands. To insure the command has been accepted, the system software should check the status of Q3 prior to and following each subsequent sector erase command. If Q3 were high on the second status check, the command may not have been accepted.
WRITE PULSE "GLITCH" PROTECTION
Noise pulses of less than 5ns(typical) on CE or WE will not initiate a write cycle.
DATA PROTECTION
The MX29F400T/B is designed to offer protection against accidental erasure or programming caused by spurious system level signals that may exist during power transition. During power up the device automatically resets the state machine in the Read mode. In addition, with its control register architecture, alteration of the memory contents only occurs after successful completion of specific command sequences. The device also incorporates several features to prevent inadvertent write cycles
LOGICAL INHIBIT
Writing is inhibited by holding any one of OE = VIL, CE = VIH or WE = VIH. To initiate a write cycle CE and WE must be a logical zero while OE is a logical one.
POWER SUPPLY DECOUPLING
In order to reduce power switching effect, each device should have a 0.1uF ceramic capacitor connected between its VCC and GND.
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MX29F400T/B
Temporary Sector Unprotect Operation
Start
RESET = VID (Note 1) Perform Erase or Program Operation Operation Completed RESET = VIH Temporary Sector Unprotect Completed(Note 2)
Note : 1. All protected sectors are temporary unprotected. VID=11.5V~12.5V 2. All previously protected sectors are protected again.
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MX29F400T/B
TEMPORARY SECTOR UNPROTECT
Parameter Std. tVIDR tRSP Note: Not 100% tested Description VID Rise and Fall Time (See Note) RESET Setup Time for Temporary Sector Unprotect Test Setup Min Min All Speed Options Unit 500 4 ns us
Temporary Sector Unprotect Timing Diagram
12V
RESET
0 or 5V Program or Erase Command Sequence 0 or 5V tVIDR
tVIDR
CE
WE
tRSP
RY/BY
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MX29F400T/B
AC CHARACTERISTICS
Parameter Std tREADY1 tREADY2 tRP1 tRP2 tRH tRB1 tRB2 Description RESET PIN Low (During Automatic Algorithms) to Read or Write (See Note) RESET PIN Low (NOT During Automatic Algorithms) to Read or Write (See Note) RESET Pulse Width (During Automatic Algorithms) RESET Pulse Width (NOT During Automatic Algorithms) RESET High Time Before Read(See Note) RY/BY Recovery Time(to CE, OE go low) RY/BY Recovery Time(to WE go low) MIN MIN MIN MIN MIN 10 500 0 0 50 us ns ns ns ns MAX 500 ns Test Setup MAX All Speed Options Unit 20 us
Note:Not 100% tested
RESET TIMING WAVEFORM
RY/BY
CE, OE
tRH
RESET
tRP2 tReady2
Reset Timing NOT during Automatic Algorithms
tReady1
RY/BY
tRB1
CE, OE
WE
tRB2
RESET
tRP1
Reset Timing during Automatic Algorithms
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MX29F400T/B
SECTOR PROTECTION WITH 12V SYSTEM
The MX29F400T/B features hardware sector protection. This feature will disable both program and erase operations for these sectors protected. To activate this mode, the programming equipment must force VID on address pin A9 and control pin OE, (suggest VID = 12V) A6 = VIL and CE = VIL.(see Table 2) Programming of the protection circuitry begins on the falling edge of the WE pulse and is terminated on the rising edge. Please refer to sector protect algorithm and waveform. To verify programming of the protection circuitry, the programming equipment must force VID on address pin A9 ( with CE and OE at VIL and WE at VIH). When A1=1, it will produce a logical "1" code at device output Q0 for a protected sector. Otherwise the device will produce 00H for the unprotected sector. In this mode, the addresses, except for A1, are don't care. Address locations with A1 = VIL are reserved to read manufacturer and device codes.(Read Silicon ID) It is also possible to determine if the sector is protected in the system by writing a Read Silicon ID command. Performing a read operation with A1=VIH, it will produce a logical "1" at Q0 for the protected sector.
POWER-UP SEQUENCE
The MX29F400T/B powers up in the Read only mode. In addition, the memory contents may only be altered after successful completion of the predefined command sequences.
SECTOR PROTECTION WITHOUT 12V SYSTEM
The MX29F400T/B also feature a hardware sector protection method in a system without 12V power suppply. The programming equipment do not need to supply 12 volts to protect sectors. The details are shown in sector protect algorithm and waveform.
CHIP UNPROTECT WITHOUT 12V SYSTEM
The MX29F400T/B also feature a hardware chip unprotection method in a system without 12V power supply. The programming equipment do not need to supply 12 volts to unprotect all sectors. The details are shown in chip unprotect algorithm and waveform.
ABSOLUTE MAXIMUM RATINGS
RATING Ambient Operating Temperature Ambient Temperature with Power Applied Storage Temperature Applied Input Voltage Applied Output Voltage VCC to Ground Potential A9 & OE VALUE -40oC to 125oC (*) -55oC to 125oC -65oC to 125oC -0.5V to 7.0V -0.5V to 7.0V -0.5V to 7.0V -0.5V to 13.5V
CHIP UNPROTECT WITH 12V SYSTEM
The MX29F400T/B also features the chip unprotect mode, so that all sectors are unprotected after chip unprotect is completed to incorporate any changes in the code. It is recommended to protect all sectors before activating chip unprotect mode. To activate this mode, the programming equipment must force VID on control pin OE and address pin A9. The CE pins must be set at VIL. Pins A6 must be set to VIH.(see Table 2) Refer to chip unprotect algorithm and waveform for the chip unprotect algorithm. The unprotection mechanism begins on the falling edge of the WE pulse and is terminated on the rising edge. It is also possible to determine if the chip is unprotected in the system by writing the Read Silicon ID command. Performing a read operation with A1=VIH, it will produce 00H at data outputs(Q0-Q7) for an unprotected sector. It is noted that all sectors are unprotected after the chip unprotect algorithm is completed.
NOTICE: Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended period may affect reliability. NOTICE: Specifications contained within the following tables are subject to change. * The automotive grade is under development.
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MX29F400T/B
CAPACITANCE TA = 25oC, f = 1.0 MHz
SYMBOL CIN1 CIN2 COUT PARAMETER Input Capacitance Control Pin Capacitance Output Capacitance MIN. TYP MAX. 8 12 12 UNIT pF pF pF CONDITIONS VIN = 0V VIN = 0V VOUT = 0V
READ OPERATION DC CHARACTERISTICS TA = 0oC to 70oC, -40oC to 125oC(Note 3), VCC = 5V 10%
SYMBOL PARAMETER ILI ILO ISB1 ISB2 ICC1 ICC2 VIL VIH VOL VOH1 VOH2 Input Low Voltage Input High Voltage(NOTE 2) Output Low Voltage Output High Voltage(TTL) 2.4 Output High Voltage(CMOS) VCC-0.4 -0.3(NOTE 1) 2.0 Operating VCC current Input Leakage Current Output Leakage Current Standby VCC current MIN. TYP MAX. 1 10 1 1(Note3) 5(Note3) 40 50 0.8 VCC + 0.3 0.45 UNIT uA uA mA uA mA mA V V V V V IOL = 2.1mA IOH = -2mA IOH = -100uA,VCC=VCC MIN CONDITIONS VIN = GND to VCC VOUT = GND to VCC CE = VIH CE = VCC 0.3V IOUT = 0mA, f=5MHz IOUT= 0mA, f=10MHz
NOTES: 1. VIL min. = -1.0V for pulse width is equal to or less than 50 ns. VIL min. = -2.0V for pulse width is equal to or less than 20 ns. 2. VIH max. = VCC + 1.5V for pulse width is equal to or less than 20 ns If VIH is over the specified maximum value, read operation cannot be guaranteed. 3. ISB2 20uA max. for Automotive grade. Which is under development.
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MX29F400T/B
AC CHARACTERISTICS TA = 0oC to 70oC, -40oC to 125oC(Note 3), VCC = 5V 10%
29F400T/B-55 (Note2) MIN. MAX. 55 55 15 0 20 0 29F400T/B-70 MIN. MAX. 70 70 40 0 30 0
SYMBOL tACC tCE tOE tDF tOH
PARAMETER Address to Output Delay CE to Output Delay OE to Output Delay OE High to Output Float (Note1) Address to Output hold
UNIT ns ns ns ns ns
Conditions CE=OE=VIL OE=VIL CE=VIL CE=VIL CE=OE=VIL
29F400T/B-90 (Note3) 29F400T/B-12(Note3)
SYMBOL tACC tCE tOE tDF tOH
PARAMETER MIN. Address to Output Delay CE to Output Delay OE to Output Delay OE High to Output Float (Note1) 0 Address to Output hold
MAX. 90 90 40 30 0
NOTE:
MIN.
0 0
MAX. 120 120 50 30
UNIT ns ns ns ns ns
Conditions CE=OE=VIL OE=VIL CE=VIL CE=VIL CE=OE=VIL
TEST CONDITIONS:
* Input pulse levels: 0.45V/2.4V * Input rise and fall times is equal to or less than 10ns * Output load: 1 TTL gate + 100pF (Including scope and jig) * Reference levels for measuring timing: 0.8V, 2.0V
1. tDF is defined as the time at which the output achieves the open circuit condition and data is no longer driven. 2. VCC=5V10%,CL=50pF,VIH/VIL=3.0V/0V, VOH/VOL=1.5V/1.5V, IOL=2mA,IOH=-2mA. 3. Automotive grade is only provided for MX29F400T/B90 & MX29F400T/B-12. Which are under development.
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MX29F400T/B
READ TIMING WAVEFORMS
VIH
Addresses
VIL
ADD Valid
tCE VIH
CE
VIL
WE
VIH VIL VIH VIL tACC tOH tOE tDF
OE
Outputs
VOH VOL
HIGH Z
DATA Valid
HIGH Z
COMMAND PROGRAMMING/DATA PROGRAMMING/ERASE OPERATION DC CHARACTERISTICS TA = 0oC to 70oC, -40oC to 125oC(Note 5), VCC = 5V 10%
SYMBOL PARAMETER MIN. ICC1 (Read) Operating VCC Current ICC2 ICC3 (Program) ICC4 (Erase) ICCES VCC Erase Suspend Current TYP MAX. 40 50 50 50 UNIT mA mA mA mA mA CONDITIONS IOUT=0mA, f=5MHz IOUT=0mA, F=10MHz In Programming In Erase CE=VIH, Erase Suspended
2
NOTES: 1. VIL min. = -0.6V for pulse width is equal to or less than 20ns. 2. If VIH is over the specified maximum value, programming operation cannot be guaranteed. 3. ICCES is specified with the device de-selected. If the device is read during erase suspend mode, current draw is the sum of ICCES and ICC1 or ICC2. 4. All current are in RMS unless otherwise noted. 5. The automotive grade is under development.
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MX29F400T/B
AC CHARACTERISTICS TA = 0oC to 70oC, VCC = 5V 10%
29F400T/B-55(Note2) Symbol tOES tCWC tCEP tCEPH1 tCEPH2 tAS tAH tDS tDH tCESC tDF tAETC tAETB tAVT tBAL tCH tCS tVLHT tOESP tWPP1 tWPP2 PARAMETER OE setup time Command programming cycle WE programming pulse width WE programming pluse width High WE programming pluse width High Address setup time Address hold time Data setup time Data hold time Output disable time (Note 1) Total erase time in auto chip erase Total erase time in auto sector erase (byte/ word program time) Sector address load time CE Hold Time CE setup to WE going low Voltge Transition Time OE Setup Time to WE Active Write pulse width for sector protect 100 0 0 4 4 10 100 0 0 4 4 10 12 us ns ns us us us ms 4(TYP.) 1.3(TYP.) MIN. 50 70 45 20 20 0 45 30 0 20 32 10.4 4(TYP.) 1.3(TYP.) MAX. 29F400T/B-70 MIN. 50 70 45 20 20 0 45 30 0 0 30 32 10.4 MAX. Unit ns ns ns ns ns ns ns ns ns ns ns s s us
CE setup time before command write 0
Total programming time in auto verify 7/12(TYP.) 210/360
7/12(TYP.) 210/360
Write pulse width for sector unprotect 12
NOTES:
1. tDF defined as the time at which the output achieves the open circuit condition and data is no longer driven. 2. Under condition of VCC=5V 10%, CL=50pF,VIH/VIL=3.0V/0V,VOH/VOL=1.5V/1.5V,IOL=2mA,IOH=-2mA.
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MX29F400T/B
AC CHARACTERISTICS TA = 0oC to 70oC, -40oC to 125oC(Note 3), VCC = 5V 10%
29F400T/B-90 Symbol tOES tCWC tCEP tCEPH1 tCEPH2 tAS tAH tDS tDH tCESC tDF tAETC tAETB tAVT tBAL tCH tCS tVLHT tOESP tWPP1 tWPP2 PARAMETER OE setup time Command programming cycle WE programming pulse width WE programming pluse width High WE programming pluse width High Address setup time Address hold time Data setup time Data hold time CE setup time before command write Output disable time (Note 1) Total erase time in auto chip erase Total erase time in auto sector erase Total programming time in auto verify (byte/ word program time) Sector address load time CE Hold Time CE setup to WE going low Voltge Transition Time OE Setup Time to WE Active Write pulse width for sector protect Write pulse width for sector unprotect 100 0 0 4 4 10 12 100 0 0 4 4 10 12 us ns ns us us us ms 4(TYP.) 1.3(TYP.) 7/12(TYP.) MIN. 50 90 45 20 20 0 45 45 0 0 30 32 10.4 210/360 4(TYP.) 1.3(TYP.) MAX. 29F400T/B-120 MIN. 50 120 45 20 20 0 50 50 0 0 30 32 10.4 MAX. Unit ns ns ns ns ns ns ns ns ns ns ns s s us
7/12(TYP.) 210/360
NOTES: 1. tDF defined as the time at which the output achieves the open circuit condition and data is no longer driven. 2. Under condition of VCC=5V 10%, CL=50pF,VIH/VIL=3.0V/0V,VOH/VOL=1.5V/1.5V,IOL=2mA,IOH=-2mA. 3. The automotive grade is under development.
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MX29F400T/B
SWITCHING TEST CIRCUITS
DEVICE UNDER TEST
1.6K ohm +5V
CL
1.2K ohm
DIODES=IN3064 OR EQUIVALENT
CL=100pF Including jig capacitance, CL=50pF for MX29F400T/B-55
SWITCHING TEST WAVEFORMS
2.4V
2.0V 2.0V
TEST POINTS
0.8V
0.45V INPUT
0.8V OUTPUT
AC TESTING: Inputs are driven at 2.4V for a logic "1" and 0.45V for a logic "0". Input pulse rise and fall time are < 20ns.(5ns for MX29F400T/B-55) Note:VIH/VIL=3.0V/0V, VOH/VOL=1.5V/1.5V, for MX29F400T/B-55.
COMMAND WRITE TIMING WAVEFORM
VCC
5V
Addresses
VIH
ADD Valid
VIL tAS tAH
WE
VIH VIL tOES tCEPH1 tCWC
tCEP
CE
VIH VIL tCS tCH
OE
VIH VIL VIH tDS tDH
Data
VIL
DIN
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MX29F400T/B
AUTOMATIC PROGRAMMING TIMING WAVEFORM
One byte data is programmed. Verify in fast algorithm and additional programming by external control are not required because these operations are executed automatically by internal control circuit. Programming completion can be verified by DATA polling and toggle bit checking after automatic verification starts. Device outputs DATA during programming and DATA after programming on Q7.(Q6 is for toggle bit; see toggle bit, DATA polling, timing waveform)
AUTOMATIC PROGRAMMING TIMING WAVEFORM (WORD MODE)
Vcc 5V
A11~A17
ADD Valid
A0~A10 WE
555H
2AAH
555H
ADD Valid
tAS tAH
tCWC tCEPH1 tAVT tCESC
CE tCEP OE tDS Q0,Q1,Q2 Q4(Note 1) Q7
Command In Command #AAH (Q0~Q7) Command In Command #55H Command In Command #A0H Data In
tDH
Command In Command In Data In DATA
tDF
Command In
DATA polling
DATA DATA
tOE
Notes: (1). Q6:Toggle bit, Q5:Timing-limit bit, Q3: Time-out bit
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MX29F400T/B
AUTOMATIC PROGRAMMING ALGORITHM FLOWCHART (WORD MODE)
START
Write Data AAH Address 555H
Write Data 55H Address 2AAH
Write Data A0H Address 555H
Write Program Data/Address
Toggle Bit Checking Q6 not Toggled YES
NO
Invalid Command
NO Verify Word Ok YES NO Auto Program Completed Q5 = 1 YES
.
Reset
Auto Program Exceed Timing Limit
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MX29F400T/B
AUTOMATIC CHIP ERASE TIMING WAVEFORM
All data in chip are erased. External erase verification is not required because data is erased automatically by internal control circuit. Erasure completion can be verified by DATA polling and toggle bit checking after automatic erase starts. Device outputs 0 during erasure and 1 after erasure on Q7.(Q6 is for toggle bit; see toggle bit, DATA polling, timing waveform)
AUTOMATIC CHIP ERASE TIMING WAVEFORM (WORD MODE)
Vcc 5V
A11~A17
A0~A10 WE
555H
2AAH
555H
555H
2AAH
555H
tAS tAH
tCWC tCEPH1
tAETC
CE tCEP OE tDS tDH Q0,Q1, Q4(Note 1) Q7
Command In Command #AAH Command In Command #55H Command In Command #80H Command In Command #AAH Command In Command #55H Command In Command #10H Command In Command In Command In Command In Command In Command In
DATA polling
(Q0~Q7) Notes: (1). Q6:Toggle bit, Q5:Timing-limit bit, Q3: Time-out bit, Q2: Toggle bit
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MX29F400T/B
AUTOMATIC CHIP ERASE ALGORITHM FLOWCHART (WORD MODE)
START
Write Data AAH Address 555H
Write Data 55H Address 2AAH
Write Data 80H Address 555H
Write Data AAH Address 555H
Write Data 55H Address 2AAH
Write Data 10H Address 555H
Toggle Bit Checking Q6 not Toggled YES
NO
Invalid Command
NO
DATA Polling Q7 = 1 YES
NO Auto Chip Erase Completed Q5 = 1
YES Reset
Auto Chip Erase Exceed Timing Limit
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MX29F400T/B
AUTOMATIC SECTOR ERASE TIMING WAVEFORM
Sector data indicated by A12 to A17 are erased. External erase verify is not required because data are erased automatically by internal control circuit. Erasure completion can be verified by DATA polling and toggle bit checking after automatic erase starts. Device outputs 0 during erasure and 1 after erasure on Q7.(Q6 is for toggle bit; see toggle bit, DATA polling, timing waveform)
AUTOMATIC SECTOR ERASE TIMING WAVEFORM (WORD MODE)
Vcc 5V
A12~A17
Sector Address0
Sector Address1
Sector Addressn
A0~A10
555H tAS tAH
2AAH
555H
555H
2AAH tCWC
WE
tCEPH1 tBAL tAETB
CE
tCEP
OE
tDS tDH
Q0,Q1, Q4(Note 1)
Command In
Command In
Command In
Command In
Command In
Command In
Command In
Command In
DATA polling
Q7
Command In
Command In
Command In
Command In
Command In
Command In
Command In Command #30H
Command In Command #30H
Command #AAH Command #55H Command #80H Command #AAH Command #55H Command #30H (Q0~Q7)
Notes: (1). Q6:Toggle bit, Q5:Timing-limit bit, Q3: Time-out bit, Q2: Toggle bit
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MX29F400T/B
AUTOMATIC SECTOR ERASE ALGORITHM FLOWCHART (WORD MODE)
START
Write Data AAH Address 555H
Write Data 55H Address 2AAH
Write Data 80H Address 555H
Write Data AAH Address 555H
Write Data 55H Address 2AAH
Write Data 30H Sector Address
Toggle Bit Checking Q6 Toggled ?
NO Invalid Command
YES Load Other Sector Addrss If Necessary (Load Other Sector Address)
Last Sector to Erase YES
NO
Time-out Bit Checking Q3=1 ?
NO
YES NO
Toggle Bit Checking Q6 not Toggled YES
NO DATA Polling Q7 = 1 Q5 = 1
YES Reset Auto Sector Erase Completed
Auto Sector Erase Exceed Timing Limit
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MX29F400T/B
ERASE SUSPEND/ERASE RESUME FLOWCHART
START
Write Data B0H
NO Toggle Bit checking Q6 not toggled YES Read Array or Program
Reading or Programming End YES Write Data 30H
NO
Continue Erase
Another Erase Suspend ? YES
NO
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MX29F400T/B
TIMING WAVEFORM FOR SECTOR PROTECTION FOR SYSTEM WITH 12V
A1
A6
12V 5V A9
tVLHT Verify
12V 5V OE
tVLHT tWPP 1 tVLHT
WE
tOESP
CE
Data
tOE
01H
F0H
A17-A12
Sector Address
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MX29F400T/B
TIMING WAVEFORM FOR CHIP UNPROTECTION FOR SYSTEM WITH 12V
A1
12V 5V A9
tVLHT
A6
Verify
12V 5V OE
tVLHT tWPP 2 tVLHT
WE
tOESP
CE
Data
tOE
00H
F0H
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MX29F400T/B
SECTOR PROTECTION ALGORITHM FOR SYSTEM WITH 12V
START
Set Up Sector Addr (A17,A16,A15,A14,A13,A12)
PLSCNT=1
OE=VID,A9=VID,CE=VIL A6=VIL
Activate WE Pulse
Time Out 10us
Set WE=VIH, CE=OE=VIL A9 should remain VID
No
Read from Sector Addr=SA, A1=1
PLSCNT=32?
No
Data=01H?
Yes Device Failed
Yes Yes
Protect Another Sector? No Remove VID from A9 Write Reset Command
Sector Protection Complete
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MX29F400T/B
CHIP UNPROTECTION ALGORITHM FOR SYSTEM WITH 12V
START
Protect All Sectors
PLSCNT=1
Set OE=A9=VID CE=VIL,A6=1
Activate WE Pulse
Time Out 12ms
Increment PLSCNT
Set OE=CE=VIL A9=VID,A1=1
Set Up First Sector Addr
Read Data from Device No
Increment Sector Addr
Data=00H?
No PLSCNT=1000?
Yes No
Yes Device Failed
All sectors have been verified? Yes Remove VID from A9 Write Reset Command
Chip Unprotect Complete
* It is recommended before unprotect whole chip, all sectors should be protected in advance.
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MX29F400T/B
TIMING WAVEFORM FOR SECTOR PROTECTION FOR SYSTEM WITHOUT 12V
A1
A6
Toggle bit polling
Verify
5V OE
tCEP
WE
* See the following Note!
CE
Data
Don't care (Note 2) tOE
01H
F0H
A18-A16
Sector Address
Note1: Must issue "unlock for sector protect/unprotect" command before sector protection for a system without 12V provided. Note2: Except F0H
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MX29F400T/B
TIMING WAVEFORM FOR CHIP UNPROTECTION FOR SYSTEM WITHOUT 12V
A1
A6
Toggle bit polling
Verify
5V OE
tCEP
WE
* See the following Note!
CE
Data
Don't care (Note 2) tOE
00H
F0H
Note1: Must issue "unlock for sector protect/unprotect" command before sector unprotection for a system without 12V provided. Note2: Except F0H
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MX29F400T/B
SECTOR PROTECTION ALGORITHM FOR SYSTEM WITHOUT 12V
START
PLSCNT=1
Write "unlock for sector protect/unprotect" Command(Table1)
Set Up Sector Addr (A17,A16,A15,A14,A13,A12)
OE=VIH,A9=VIH CE=VIL,A6=VIL
Activate WE Pulse to start Data don't care
Toggle bit checking Q6 not Toggled Yes Increment PLSCNT Set CE=OE=VIL A9=VIH
No
No
Read from Sector Addr=SA, A1=1
PLSCNT=32?
No
Data=01H?
Yes Device Failed
Yes Yes
Protect Another Sector? No Write Reset Command
Sector Protection Complete
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MX29F400T/B
CHIP UNPROTECTION ALGORITHM FOR SYSTEM WITHOUT 12V
START
Protect All Sectors
PLSCNT=1
Write "unlock for sector protect/unprotect" Command (Table 1)
Set OE=A9=VIH CE=VIL,A6=1
Activate WE Pulse to start Data don't care
No
Toggle bit checking Q6 not Toggled Yes Set OE=CE=VIL A9=VIH,A1=1
Increment PLSCNT
Set Up First Sector Addr
Read Data from Device No
Increment Sector Addr
Data=00H?
No PLSCNT=1000?
Yes No
Yes Device Failed
All sectors have been verified? Yes Write Reset Command
Chip Unprotect Complete
* It is recommended before unprotect whole chip, all sectors should be protected in advance.
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MX29F400T/B
ID CODE READ TIMING WAVEFORM
VCC
5V VID
ADD A9
VIH VIL
VIH VIL
ADD A0
tACC
tACC
ADD A1-A8 A10-A17 CE
VIH VIL
VIH VIL
WE
VIH VIL
tCE
OE
VIH VIL
tOE tDF tOH tOH
VIH
DATA Q0-Q15
DATA OUT
VIL
DATA OUT 23H/ABH (Byte) 2223H/22ABH (Word)
C2H/00C2H
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MX29F400T/B
ERASE AND PROGRAMMING PERFORMANCE(1)
PARAMETER
Sector Erase Time Chip Erase Time Byte Programming Time Word Programming Time Chip Programming Time Erase/Program Cycles 100,000
MIN.
LIMITS TYP.(2)
1.3 4 7 12 4
MAX.(3)
10.4 32 210 360 12
UNITS
sec sec us us sec Cycles
Note:
1.Not 100% Tested, Excludes external system level over head. 2.Typical values measured at 25 C,5V. 3.Maximum values measured at 25C,4.5V.
LATCH-UP CHARACTERISTICS
MIN. Input Voltage with respect to GND on all pins except I/O pins Input Voltage with respect to GND on all I/O pins Current Includes all pins except Vcc. Test conditions: Vcc = 5.0V, one pin at a time. -1.0V -1.0V -100mA MAX. 13.5V Vcc + 1.0V +100mA
DATA RETENTION
PARAMETER Data Retention Time MIN. 20 UNIT Years
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MX29F400T/B
ORDERING INFORMATION
Access Time Operating Current Standby Current Temperature (ns) MAX.(mA) MAX.(uA) Range MX29F400TMC-55 55 40 5 0oC~70oC MX29F400TMC-70 70 40 5 0oC~70oC MX29F400TMC-90 90 40 5 0oC~70oC MX29F400TMC-12 120 40 5 0oC~70oC MX29F400TTC-55 55 40 5 0oC~70oC MX29F400TTC-70 MX29F400TTC-90 MX29F400TTC-12 MX29F400TTC-55G MX29F400TTC-70G MX29F400TTC-90G MX29F400TTC-12G MX29F400BMC-55 MX29F400BMC-70 MX29F400BMC-90 MX29F400BMC-12 MX29F400BTC-55 MX29F400BTC-70 MX29F400BTC-90 MX29F400BTC-12 MX29F400BTC-55G MX29F400BTC-70G MX29F400BTC-90G MX29F400BTC-12G 70 90 120 55 70 90 120 55 70 90 120 55 70 90 120 55 70 90 120 40 40 40 40 40 40 40 40 40 40 40 40 40 40 40 40 40 40 40 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 0oC~70oC 0oC~70oC 0oC~70oC 0oC~70oC 0oC~70oC 0oC~70oC 0oC~70oC 0oC~70oC 0oC~70oC 0oC~70oC 0oC~70oC 0oC~70oC 0oC~70oC 0oC~70oC 0oC~70oC 0oC~70oC 0oC~70oC 0oC~70oC 0oC~70oC PART NO. PACKAGE 44 Pin SOP 44 Pin SOP 44 Pin SOP 44 Pin SOP 48 Pin TSOP (Normal Type) 48 Pin TSOP (Normal Type) 48 Pin TSOP (Normal Type) 48 Pin TSOP (Normal Type) 48 Pin TSOP (Normal Type) 48 Pin TSOP (Normal Type) 48 Pin TSOP (Normal Type) 48 Pin TSOP (Normal Type) 44 Pin SOP 44 Pin SOP 44 Pin SOP 44 Pin SOP 48 Pin TSOP (Normal Type) 48 Pin TSOP (Normal Type) 48 Pin TSOP (Normal Type) 48 Pin TSOP (Normal Type) 48 Pin TSOP (Normal Type) 48 Pin TSOP (Normal Type) 48 Pin TSOP (Normal Type) 48 Pin TSOP (Normal Type) Remark
PB free PB free PB free PB free
PB free PB free PB free PB free
Note: MX29F400T/B-55 is supplied by request.
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MX29F400T/B
PACKAGE INFORMATION
P/N:PM0439
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MX29F400T/B
P/N:PM0439
REV. 2.2, NOV. 29, 2002
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MX29F400T/B
REVISION HISTORY
Revision 1.0 1.1 Description Page Date JUL/01/1999 SEP/01/1999
1.2
1.3
1.4 1.5 1.6 1.7 1.8 1.9 2.0 2.1 2.2
To remove "Advanced Information" datasheet marking and P1 contain information on products in full production. To correct the typing error on package dimension. P41 In fact,the physical packages are never changed,just correct the previously typing error. To add the description for 100K endurance cycles P1,P40 To modify timing of sector address loading period while P9 operating multi-sector erase from 80uS to 30uS To modify tBAL from 80uS to 100uS P20,P21 1.Program/erase cycle times:10K cycles-->100K cycles P1,34 2.To add data retention minimum 20 years P1,34 3.To remove A9 from "timing waveform for sector protection for P34 system without 12V" To remove A9 from "timing waveform for chip unprotection for P35 system without 12V" Add erase suspend ready max. 100us in ERASE SUSPEND's P10 section at page10 To modify "Package Information" P41~42 Add automotive grade P16-20,40 Add MX29F400BTA-90/12 in Ordering Information P40 Add MX29F400TMI-55/70/90/12 & MX29F400TTI-55/70/90/12 in P40 Ordering Information To added 48-TSOP with PB free package P41 1. Remove industrial grade P40 2. Add remark of "under development" for automotive grade P16~19,21 To modify Package Information P41~42 Updated ordering information P40
SEP/17/1999
DEC/20/1999
MAY/29/2000 JUN/12/2001 NOV/12/2001 FEB/04/2002 FEB/19/2002 APR/03/2002 AUG/13/2002 NOV/20/2002 NOV/29/2002
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MACRONIX INTERNATIONAL CO., LTD.
HEADQUARTERS:
TEL:+886-3-578-6688 FAX:+886-3-563-2888
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TEL:+32-2-456-8020 FAX:+32-2-456-8021
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MACRONIX AMERICA, INC.
TEL:+1-408-453-8088 FAX:+1-408-453-8488
CHICAGO OFFICE:
TEL:+1-847-963-1900 FAX:+1-847-963-1909
http : //www.macronix.com
MACRONIX INTERNATIONAL CO., LTD. reserves the right to change product and specifications without notice.

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